Qichen Jin with adviser A. Banerjee
Insulated-gate bipolar transistors (IGBTs), widely used as power transistors because of their high-voltage rating. can be used in electrifying transportation including cars, trains and airplanes. By estimating the lifetime of IGBT modules, we can replace them before critical failures occur for these crucial applications. Vce during the IGBT turn-on period as well as Vfd for the anti-parallel diode are required in order to achieve the lifetime estimation of IGBT modules.
During the block state in the IGBT module, the voltage across Vce is in the kV scale. Direct measurement will result in poor resolution. Measurement circuitry shown in Figure 12 utilizes diodes for high-voltage blocking and op-amp for voltage tracking for Vce during the IGBT turn-on period and Vfd for the anti-parallel diode. The voltage is then digitized by analog to digital converters (ADCs) in the microcontroller and sent via an optical channel. This research is funded by CRRC, China.