Co-Design of Electric Machine and Integrated Modular Motor Drive based GaN Devices
Yehui Han and Thomas Jahns – University of Wisconsin-Madison
The proposed integrated modular motor drive (IMMD) utilizes low-voltage high-performance GaN FETs, which have advantages of size, efficiency and thermal performance. This concept has been verified by the experimental results of an IMMD prototype and a rewound 6-lead induction machine. The IMMD prototype modules are rated at 180V and 7A. Benefiting from the proposed series structure and faster switching frequencies of GaN FETs, the input capacitors are small and flat. The height of the IMMD module is only 0.6 inch and the radius is 3 inches as shown in Fig. 9.
The prototype is also equipped with isolated current and voltage measurements for the converter control. The GaN FETs and the other components in the prototype converter are rated at 3A instead of 7A because 3A devices were available. A rewound induction machine is shown in Fig. 10. The original machine is a 36-slot, 4-pole design. The machine winding has been split into two groups. Each group has a 2-pole design and is driven by an IMMD module.
This research has been supported by the Grainger Center for Electric Machinery and Electromechanics.